| PART |
Description |
Maker |
| AP2530AGY-HF AP2530AGY-HF-14 |
Low Gate Charge, Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| TSM085P03CV |
Low gate charge for fast power switching
|
Taiwan Semiconductor Co...
|
| 2SD1843 2SD1843-T |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN硅外延晶体管（达林顿接线）低频功率放大器和低速开
Low-freq. power amp., low-speed switching power tr.
|
NEC, Corp.
NEC[NEC]
|
| KMD6D0DN40Q |
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
|
KEC(Korea Electronics)
|
| SMP1340 SMP1340-001 SMP1340-003 SMP1340-004 SMP134 |
Fast Switching Speed, Low Capacitance Plastic Packaged PIN Diodes
Fast Switching Speed Low Capacitance Plastic Packaged PIN Diodes
|
Alpha Industries Inc
ALPHA[Alpha Industries]
|
| AP2344GEN-HF AP2344GEN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| AP2308GEN-HF AP2308GEN-HF-14 |
Capable of 2.5V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| RM100C1A-XXF RM100CA/C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| AP2532GY |
Low Gate Charge, Fast Switching Performance
2.4 A, 30 V, 0.13 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Advanced Power Electronics Corp.
|
| BAV21W |
200mW SMD Fast Switch Diode Fast Switching Speed
|
First Components Intern...
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
